E. Kolesnikova

Работ: 4

A.F. Ioffe Physicotechnical Institute RAS

1. Modification of Silicon Oxide by High Energy Electron Beam

   E. Kolesnikova, A. А. Ситникова, В. И. Соколов +1

   СтатьяSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000103

2. Investigation of 4H-SiC Layers Implanted by Al Ions

   E. Kolesnikova, Evgenia V. Kalinina, A. А. Ситникова +2

   СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2007Цитирований: 0

   ABIABI:AkademIndex/openalex/2007.article.000171

3. Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

   Evgenia V. Kalinina, M. V. Zamoryanskaya, E. Kolesnikova +1

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000223

4. Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

   D.B. Shustov, E. Kolesnikova, Evgenia V. Kalinina +2

   СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2009Цитирований: 0

   ABIABI:AkademIndex/openalex/2009.article.000273