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Vitalii V. Kozlovski

Работ: 12

St Petersburg State Polytechnical University, St Petersburg 195251, Russia

  1. Positron annihilation on defects in silicon irradiated with 15 MeV protons

    N.Yu. Arutyunov, Mohamed Elsayed, R. Krause‐Rehberg +3

    СтатьяMuon and positron interactions and applicationsJournal of Physics Condensed Matter2012Цитирований: 1
    ABI

  2. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

    СтатьяMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2017Цитирований: 1
    ABI

  3. Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

    Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +3

    СтатьяMuon and positron interactions and applicationsActa Materialia2014Цитирований: 1
    ABI

  4. Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +4

    СтатьяMuon and positron interactions and applicationsJournal of Physics Conference Series2015Цитирований: 1
    ABI

  5. Positron probing of disordered regions in neutron‐irradiated silicon

    N.Yu. Arutyunov, Nick S. Bennett, Neil M. Wight +4

    СтатьяMuon and positron interactions and applicationsphysica status solidi (b)2016Цитирований: 1
    ABI

  6. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

    V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum1997Цитирований: 0
    ABI

  7. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  8. Radiation Hardness of Silicon Carbide

    A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  9. Modification of the Silicon Carbide by Proton Irradiation

    Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2

    СтатьяSilicon and Solar Cell TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  10. Influence of Irradiation on Excess Currents in SiC pn Structures

    Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
    ABI

  11. Formation and annealing of vacancy-P complexes in proton-irradiated germanium

    Mohamed Elsayed, N.Yu. Arutyunov, R. Krause‐Rehberg +2

    СтатьяMuon and positron interactions and applicationsActa Materialia2015Цитирований: 0
    ABI

  12. Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n<sup>+</sup>p 4H-SiC Structures

    Anatoly M. Strel’chuk, A. E. Kalyadin, A. А. Lebedev +3

    СтатьяSemiconductor materials and devicesMaterials science forum2018Цитирований: 0
    ABI