I. S. Kotousova

Работ: 2

1. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000163

2. On Current Limitations in Porous SiC Applications

   M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3

   СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000114