R. V. Parfeniev

Работ: 2

Russian Academy of Sciences

1. Grain Boundary Influence on the Electrical Properties of Tellurium Microstructure Ingots and Nanocluster Crystals

   V. A. Berezovets, I. I. Farbshteǐn, R. V. Parfeniev +2

   СтатьяPhase-change materials and chalcogenidesMaterials science forum2006Цитирований: 1

   ABIABI:AkademIndex/openalex/2006.article.000253

2. Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

   R. V. Parfeniev, I. I. Farbshteǐn, I. L. Shul’pina +5

   СтатьяPhase-change materials and chalcogenidesMaterials science forum2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.654952