I. I. Farbshteǐn

Работ: 3

Ioffe Physicotechnical Institute RAS

1. Grain Boundary Influence on the Electrical Properties of Tellurium Microstructure Ingots and Nanocluster Crystals

   V. A. Berezovets, I. I. Farbshteǐn, R. V. Parfeniev +2

   СтатьяPhase-change materials and chalcogenidesMaterials science forum2006Цитирований: 1

   ABIABI:AkademIndex/openalex/2006.article.000253

2. Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

   R. V. Parfeniev, I. I. Farbshteǐn, I. L. Shul’pina +5

   СтатьяPhase-change materials and chalcogenidesMaterials science forum2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.654952

3. Quantum corrections to resistance of microblock tellurium at ultralow temperatures under phonon freezing conditions

   I. I. Farbshteǐn, A. V. Chernyaev, D. V. Shamshur +1

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000407