Materials science forum

Работ: 86

Книжная серия · ISSN 0255-5476

Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN
V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7
СтатьяGaN-based semiconductor devices and materialsMaterials science forum1997Цитирований: 0
ABI
Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures
Н. А. Соболев, A. M. Emel’yanov, Yu. A. Nikolaev +6
СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum1997Цитирований: 0
ABI
HVPE GaN and AIGaN 'Substrates' for Homoepitaxy
Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5
СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
ABI
Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates
W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11
СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
ABI
Electrical and Optical Properties of Highly Strained GaN Epilayers
A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8
СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
ABI
Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
J. Holst, M. Straßburg, N. N. Ledentsov +13
СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0
ABI
Optically Transparent 6H-Silicon Carbide
A. Bakin, Sergey I. Dorozhkin, A. S. Zubrilov +2
СтатьяThin-Film Transistor TechnologiesMaterials science forum1998Цитирований: 0
ABI
Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures
L. E. Vorobjev, D. A. Firsov, V. A. Shalygin +11
СтатьяLaser-Matter Interactions and ApplicationsMaterials science forum1998Цитирований: 0
ABI
Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions
Konstantin Vassilevski, Konstantinos Zekentes, George Konstantinidis +3
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
ABI
Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC
Evgenia V. Kalinina, A. S. Zubrilov, N.I. Kuznetsov +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
ABI
Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
ABI
Growth of SiC and GaN on Porous Buffer Layers
M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12
СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0
ABI
4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
ABI
Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions
N.I. Kuznetsov, A. E. Nikolaev, Yu. Melnik +1
СтатьяGaN-based semiconductor devices and materialsMaterials science forum2000Цитирований: 0
ABI
Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode
Roumen Kakanakov, Liliana Kassamakova, N. Hristeva +3
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0
ABI
p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization
A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 0
ABI
GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates
Michael E. Mastro, O. Kryliouk, Todd Dann +4
СтатьяGaN-based semiconductor devices and materialsMaterials science forum2002Цитирований: 0
ABI
Radiation Hardness of Silicon Carbide
A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI
SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range
G. Bertuccio, R. Casiraghi, E. Gatti +5
СтатьяParticle Detector Development and PerformanceMaterials science forum2003Цитирований: 0
ABI
Modelling the Formation of Nano-Sized SiC on Si
K. L. Safonov, Alexander Schmidt, D. V. Kulikov +2
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI
Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability
L. Kassamakova-Kolaklieva, Roumen Kakanakov, V. Cimalla +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI
Reliability of 4H-SiC p-n Diodes on LPE Grown Layers
G. Sarov, Roumen Kakanakov, T. Cholakova +6
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI
Porous SiC: New Applications through In- and Out- Dopant Diffusion
M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7
СтатьяSemiconductor materials and devicesMaterials science forum2003Цитирований: 0
ABI
p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4
СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
ABI