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D. V. Kulikov

Работ: 7

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

  1. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

    R.A. Yankov, M. Voelskow, W. Kreissig +6

    СтатьяSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters1997Цитирований: 0
    ABI

  2. Physical model of the formation of a periodic structure on the surface of pyrolytic graphite under high-energy ion bombardment

    D. V. Kulikov, А. Л. Суворов, R. A. Suris +2

    СтатьяIon-surface interactions and analysisTechnical Physics Letters1997Цитирований: 0
    ABI

  3. Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions

    D. V. Kulikov, Yu. V. Trushin, R.A. Yankov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters1998Цитирований: 0
    ABI

  4. Size distribution of copper nanoclusters in amorphous carbon

    D. V. Kulikov, Yu. V. Trushin, V. S. Kharlamov +1

    Статьяnanoparticles nucleation surface interactionsTechnical Physics Letters1999Цитирований: 0
    ABI

  5. Modelling the Formation of Nano-Sized SiC on Si

    K. L. Safonov, Alexander Schmidt, D. V. Kulikov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  6. Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures

    Alexander Schmidt, Yuri V. Trushin, K. L. Safonov +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
    ABI

  7. Kinetic simulation of the 3D growth of subsurface impurity nanoclusters during cobalt deposition onto a copper surface

    M. N. Lubov, D. V. Kulikov, O. Kurnosikov +1

    Статьяnanoparticles nucleation surface interactionsBulletin of the Russian Academy of Sciences Physics2014Цитирований: 0
    ABI