High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC
R.A. YankovRossendorf Research Center, Dresden, GermanyM. VoelskowA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgW. KreissigA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgD. V. KulikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgJ. PezoldtA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgW. SkorupaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. V. TrushinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgVladimir S. KharlamovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgDmitry TsigankovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
A series of experimental and theoretical investigations has been initiated for 6H-SiC samples sequentially implanted with high doses of N+(65 keV) + N+(120 keV)+Al+(100 keV)+Al+(160 keV) ions at temperatures between 200 and 800 °C. Nitrogen and carbon distribution profiles are measured by ERD and structural defect distributions are measured by Rutherford backscattering with channeling. A comparison between the experimental data and the results of computer simulation yields a physical model to describe the relaxation processes of the implanted SiC structure, where the entire implanted volume is divided into regions of different depth, having different guiding kinetics mechanisms.
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