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Materials science forum

Работ: 86

Книжная серия · ISSN 0255-5476

  1. 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

    N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  2. Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  3. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

    T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  4. Structural Transformation of Dislocated Micropipes in Silicon Carbide

    M. Yu. Gutkin, A. G. Sheĭnerman, T. S. Argunova +4

    СтатьяAdvanced Surface Polishing TechniquesMaterials science forum2004Цитирований: 0
    ABI

  5. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

    A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  6. Modification of the Silicon Carbide by Proton Irradiation

    Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2

    СтатьяSilicon and Solar Cell TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  7. On Current Limitations in Porous SiC Applications

    M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3

    СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum2005Цитирований: 0
    ABI

  8. Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors

    G. Bertuccio, S. Binetti, S. Caccia +9

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
    ABI

  9. Influence of Irradiation on Excess Currents in SiC pn Structures

    Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
    ABI

  10. Study of Ion Induced Damage in 4H-SiC

    Alessandro Lo Giudice, P. Oliveira, F. Fizzotti +6

    СтатьяIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum2005Цитирований: 0
    ABI

  11. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
    ABI

  12. Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition

    M. V. Muzafarova, Ivan V. Ilyin, E. N. Mokhov +7

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
    ABI

  13. Current Analysis of Ion Implanted p<sup>+</sup>/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

    Roberta Nipoti, Fabio Bergamini, F. Moscatelli +3

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
    ABI

  14. About the Nature of Recombination Current in 4H-SiC pn Structures

    Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
    ABI

  15. Radiation Hard Devices Based on SiC

    Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
    ABI

  16. Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures

    Alexander Schmidt, Yuri V. Trushin, K. L. Safonov +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
    ABI

  17. Laser Photoacoustic Microscopy of Mechanical Stresses in Modern Ceramics and Metals

    К. Л. Муратиков, A. L. Glazov

    СтатьяThermography and Photoacoustic TechniquesMaterials science forum2006Цитирований: 0
    ABI

  18. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

    A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

    СтатьяGaN-based semiconductor devices and materialsMaterials science forum2006Цитирований: 0
    ABI

  19. Photoinduced Effects in EPR Spectra of Copper Doped Potassium Tantalate

    A. G. Badalyan, Carlo B. Azzoni, Pietro Galinetto +6

    СтатьяPhotorefractive and Nonlinear OpticsMaterials science forum2006Цитирований: 0
    ABI

  20. Quenching Photoconductivity and Photoelectric Memory in 6H-SiC

    M. Duisenbaev

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
    ABI

  21. 4H-SiC High Temperature Spectrometers

    Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 0
    ABI

  22. Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with <sup>30</sup>Si Isotope: Electron Paramagnetic Resonance Study

    Ivan V. Ilyin, M. V. Muzafarova, P. G. Baranov +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 0
    ABI

  23. Carrier Removal in Electron Irradiated 4H and 6H SiC

    M. Mikelsen, Ulrike Großner, J. H. Bleka +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2008Цитирований: 0
    ABI

  24. Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

    G. Bertuccio, S. Caccia, F. Nava +7

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2009Цитирований: 0
    ABI

  25. 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

    Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2009Цитирований: 0
    ABI