Fabio Bergamini

Работ: 1

CNR-IMM

1. Current Analysis of Ion Implanted p<sup>+</sup>/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

   Roberta Nipoti, Fabio Bergamini, F. Moscatelli +3

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000136