F. Fizzotti

Работ: 1

INFM-research unit, Torino-University,

1. Study of Ion Induced Damage in 4H-SiC

   Alessandro Lo Giudice, P. Oliveira, F. Fizzotti +6

   СтатьяIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000188