Статья

Depth profiles of Sb atoms implanted into Ti

V. Havránek Nuclear Physics Institute, 250 68, Řež, CzechoslovakiaV. Hnatowicz Nuclear Physics Institute, 250 68, Řež, CzechoslovakiaJ. Kvítek Nuclear Physics Institute, 250 68, Řež, CzechoslovakiaV. Rybka Department of Chemical Technology of Electronics Materials, Institute of Chemical Technology, 166 28, Prague, CzechoslovakiaVáclav Švorčı́k Department of Chemical Technology of Electronics Materials, Institute of Chemical Technology, 166 28, Prague, CzechoslovakiaP. Charvát Department of Chemical Technology of Electronics Materials, Institute of Chemical Technology, 166 28, Prague, Czechoslovakia

Radiation effects and defects in solidsjournal1991en

ABI

Аннотация

Abstract The parameters of the depth profiles of Sb atoms implanted into titanium were measured using standard RBS technique. The measured profile moments are compared with theoretical values calculated by means of TRIM program. The experimental projected ranges are lower by 15–25% than the theoretical ones but these differences may partly be explained by target sputtering. The measured range stragglings agree with those calculated within few percent. Extremely high values of profile skewness and kurtosis are found for shallow profiles. Key Words: SbTirangestragglingRBS

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Темы

Ion-surface interactions and analysis Nuclear Physics and Applications Integrated Circuits and Semiconductor Failure Analysis

Идентификаторы

DOI: 10.1080/10420159108220631

Цитирования и источники

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