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Integrated Circuits and Semiconductor Failure Analysis

Работ: 142

  1. Capacitance transient spectroscopy of radiation defects on the interface Si-SiO 2 of silcon MIS-structures

    Shakhrukh Kh. Daliev, Sharifa B. Utamuradova, Kh.S. Daliev

    СтатьяSilicon and Solar Cell Technologies2004Цитирований: 0
    ABI

  2. Investigation of γ-radiation defect formation at the Si-SiO 2 interface

    S.Z. Zaynabidinov, Sh. Kh. Yulchiev, Р. Алиев

    СтатьяIntegrated Circuits and Semiconductor Failure Analysis2004Цитирований: 0
    ABI

  3. Influence of Irradiation on Excess Currents in SiC pn Structures

    Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
    ABI

  4. RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS

    L. Torrisi, S. Gammino, A. Picciotto +5

    СтатьяIon-surface interactions and analysisRadiation effects and defects in solids2005Цитирований: 0
    ABI

  5. Study of Ion Induced Damage in 4H-SiC

    Alessandro Lo Giudice, P. Oliveira, F. Fizzotti +6

    СтатьяIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum2005Цитирований: 0
    ABI

  6. <title>Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)</title>

    A. M. Rasulov, A.A. Dzhurakhalov, F. F. Umarov +2

    СтатьяIon-surface interactions and analysisProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE2005Цитирований: 0
    ABI

  7. Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment

    Abdurauf A. Dzhurakhalov, S.E. Rahmatov, N.A. Teshabaeva +1

    СтатьяIon-surface interactions and analysisMRS Proceedings2005Цитирований: 0
    ABI

  8. Potential sputtering of LiF and SiC under bombardment by Ar q+ (q = 1-6) multicharged ions

    Б.Г. Атабаев

    СтатьяIon-surface interactions and analysis2005Цитирований: 0
    ABI

  9. Development of the Lund Single Ion Hit Facility at the new sub micrometer beamline

    Natalia Arteaga-Marrero, Jan Pallon, Vaida Auzelyte +5

    СтатьяIon-surface interactions and analysisLund University Publications (Lund University)2006Цитирований: 0
    ABI

  10. Ion Beams in Nanoscience and Technology

    Ragnar Hellborg, Harry J. Whitlow, Yanweng Zhang

    СтатьяIon-surface interactions and analysis2009Цитирований: 0
    ABI

  11. Low-field ion microscopy

    V. A. Ksenofontov, E. V. Sadanov, O. A. Velikodnaya

    СтатьяIon-surface interactions and analysisTechnical Physics2009Цитирований: 0
    ABI

  12. Tunable SiO2/Si-based nanostructures

    А. Н. Георгобиани, A. É. Atamuratov, U. A. Aminov +1

    СтатьяAdvanced Surface Polishing TechniquesInorganic Materials2009Цитирований: 0
    ABI

  13. Limits of applicability of a time-of-flight ion-mass analyzer in uncovering partial currents of ions emitted by pulsed laser ion sources

    J. Krása, L. Láska, K. Rohlena +5

    СтатьяIon-surface interactions and analysisRadiation effects and defects in solids2010Цитирований: 0
    ABI

  14. Computer simulation of layer‐by‐layer sputtering at grazing low‐energy ion‐surface interactions

    F. F. Umarov, A.A. Dzhurakhalov

    СтатьяIon-surface interactions and analysisSurface and Interface Analysis2012Цитирований: 0
    ABI

  15. Effect of rate of dose build-up of manganese ions on changes in mechanical properties, morphology, and composition of surface layers of carbon steel

    В. Л. Воробьев, П. В. Быков, V. Ya. Bayankin

    СтатьяIon-surface interactions and analysisThe Physics of Metals and Metallography2012Цитирований: 0
    ABI

  16. Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

    Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1

    СтатьяSemiconductor materials and interfacesUkrainian Journal of Physics2013Цитирований: 0
    ABI

  17. SIMS of silicon bombarded with Sb+ m cluster ions

    С. Н. Морозов, У. Х. Расулев

    СтатьяIon-surface interactions and analysisBulletin of the Russian Academy of Sciences Physics2014Цитирований: 0
    ABI

  18. Utilization of Acoustic Emission in Scratch Test Evaluation

    Jan Tomáštík, Radim Čtvrtlík, Petr Bohac +4

    СтатьяMetal and Thin Film MechanicsKey engineering materials2015Цитирований: 0
    ABI

  19. Experimental research on silicon carbide photoconductive semiconductor switch

    Yanling Sun, Meng Yang, Chaoyang Song +2

    СтатьяPulsed Power Technology ApplicationsMicrowave and Optical Technology Letters2015Цитирований: 0
    ABI

  20. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4

    A.E. Atamuratov, U.A. Aminov, Z.A. Atamuratova +3

    СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2015Цитирований: 0
    ABI

  21. Study of doping uniformity of a 200 kV ion implanter by RBS and sheet resistance measurements

    Hui Li, Ze-Song Wang, Shengjun Zhang +5

    СтатьяIon-surface interactions and analysisNuclear Science and Techniques2016Цитирований: 0
    ABI

  22. Effect of Ion Refocusing and Focusing at the Ne and Ar Small Angle Ion Bombardment on the Surface III-V Compound Semiconductors

    Karimov Muxtor Karimberganovich, Sadullaev Shuxrat Ravshanovich, Sobirov Ravshanbek Yuldashbaevich

    СтатьяIon-surface interactions and analysisInternational Journal of Trend in Scientific Research and Development2018Цитирований: 0
    ABI

  23. THE COLLIDING PARTICLES MASS RATIO INFLUENCE ON PECULIARITIES OF LOW-ENERGY ION NEAR-SURFACE IMPLANTATION AT CHANNELING CONDITIONS

    F. F. Umarov, A. M. Rasulov, A.A. Dzhurakhalov

    СтатьяIon-surface interactions and analysis«Узбекский физический журнал»2018Цитирований: 0
    ABI

  24. The amplitude of RTN in nanometer SOI FinFET with different channel shape

    Ahmed Yusupov, A. É. Atamuratov, Azamat E. Abdikarimov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignDevelopments of Artificial Intelligence Technologies in Computation and Robotics2020Цитирований: 0
    ABI

  25. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology2021Цитирований: 0
    ABI