Статья

Effect of Ion Refocusing and Focusing at the Ne and Ar Small Angle Ion Bombardment on the Surface III-V Compound Semiconductors

Karimov Muxtor KarimberganovichDepartment of Physics, Faculty of Physic and Mathematics of Urgench State University, Urgench, UzbekistanSadullaev Shuxrat RavshanovichSobirov Ravshanbek Yuldashbaevich

International Journal of Trend in Scientific Research and Developmentjournal2018en

ABI

Аннотация

In this paper presents small angle ion scattering of noble gases from the III-V compound semiconductor surfaces have been studied by the method of computer simulation. The effect ion focusing and refocusi was studied. The coefficient of scattering ions has been calculated.

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Темы

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Semiconductor materials and devices

Идентификаторы

DOI: 10.31142/ijtsrd15772

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