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Integrated Circuits and Semiconductor Failure Analysis

Работ: 142

  1. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

    Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

    СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0
    ABI

  2. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    СтатьяSemiconductor materials and devices2022Цитирований: 0
    ABI

  3. Temperature Dependences of the Sputtering of Negative Silicon Cluster Ions

    Б.Г. Атабаев, R. Dzabbarganov, F. R. Yuzikaeva +3

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0
    ABI

  4. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

    S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

    СтатьяIon-surface interactions and analysisCoatings2024Цитирований: 0
    ABI

  5. SiC plasma characterization produced by 3 ns pulse laser at 10 <sup>10</sup> W/cm <sup>2</sup> intensity

    L. Torrisi, A. Torrisi, M. Cutroneo

    СтатьяSilicon Carbide Semiconductor TechnologiesRadiation effects and defects in solids2024Цитирований: 0
    ABI

  6. POLARIZATION DEPENDENCE OF SINGLE-PHOTON INTERBAND LINEAR CIRCULAR DICROISM IN A3B5 SEMICONDUCTORS

    Rasulov Rustam Yavkachovich, Isomiddinova Umida Mamurjonova, Kasimov Forrukh Kasimovich +1

    СтатьяIntegrated Circuits and Semiconductor Failure AnalysisAustrian Journal of Technical and Natural Sciences2024Цитирований: 0
    ABI

  7. Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  8. The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  9. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  10. Spectral physical unclonable functions: downscaling randomness with multi-resonant hybrid particles

    Martin Sandomirskii, Е. А. Петрова, Pavel Kustov +7

    СтатьяPhysical Unclonable Functions (PUFs) and Hardware SecurityNature Communications2025Цитирований: 0
    ABI

  11. Atomic-Scale Simulations of Chemical Damage in Neoprene under Noble Gas Ion Irradiation

    Jiemin Luo, Meng Ren, Qiang Liu +4

    СтатьяIon-surface interactions and analysisThe Journal of Physical Chemistry B2025Цитирований: 0
    ABI

  12. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    СтатьяSemiconductor materials and devicesJournal of Computational Electronics2025Цитирований: 0
    ABI

  13. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
    ABI

  14. On the Theory of the Intraband Mechanism of Single-Photon Absorption in Semiconductors, Taking into Account the Effect of Coherent Saturation

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Forrukh U. Kasimov +2

    СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2025Цитирований: 0
    ABI

  15. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

    M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

    СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
    ABI

  16. A Versatile Strategy for Comprehensive Data Collection and Retention in Embedded SoC Memories

    Paolo Bernardi, Giorgio Insinga, M. Battilana +7

    СтатьяVLSI and Analog Circuit TestingACM Transactions on Embedded Computing Systems2025Цитирований: 0
    ABI

  17. Quality control of outsole products using SPC and FTA methods

    S. Sunariyah, Wiwik Sulistyowati, Atikha Sidhi Cahyana +2

    СтатьяReliability and Maintenance OptimizationAIP conference proceedings2026Цитирований: 0
    ABI