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Integrated Circuits and Semiconductor Failure Analysis

Работ: 142

  1. The emission of atomic and molecular ions under single and multiple-charged rare gas ion bombardment of LiF, KCl, SiC

    Б.Г. Атабаев, Sh.S. Radjabov, M.Kh. Akhmadzhanova

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1995Цитирований: 1
    ABI

  2. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

    A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics2000Цитирований: 1
    ABI

  3. Effect of high-dose low-energy reactive-ion implantation on cold cathode properties

    Flyura Djurabekova, Б. Е. Умирзаков, F. F. Umarov +1

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2003Цитирований: 1
    ABI

  4. Ion Beams in Nanoscience and Technology

    Ragnar Hellborg, Harry J. Whitlow, Yanweng Zhang

    КнигаIon-surface interactions and analysisParticle acceleration and detection2009Цитирований: 1
    ABI

  5. Calculation of resonance frequencies of electrons present in the contact area of two semiconductors

    Sh. K. Kaniyazov, K. A. Ismaylov, Abat Muratov

    СтатьяSemiconductor materials and interfacesRadioelectronics and Communications Systems2011Цитирований: 1
    ABI

  6. Cluster projectile ions used for the SIMS analysis of silicon

    Sh.Dj. Akhunov, С. Н. Морозов

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 1
    ABI

  7. Deep Level Transient Spectroscopy of Silicon, Doped by Zirconium

    Shakhrukh Kh. Daliev

    СтатьяIon-surface interactions and analysisInternational Journal for Research in Applied Science and Engineering Technology2018Цитирований: 1
    ABI

  8. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2020Цитирований: 1
    ABI

  9. Sputtering of GaAs target under Bi+ cluster ions bombardment

    Sh.Dj. Akhunov, G.P. Kakhramonova, Sh.M. Axmedov +2

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2022Цитирований: 1
    ABI

  10. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    СтатьяSemiconductor materials and devices2024Цитирований: 1
    ABI

  11. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 1
    ABI

  12. Investigation of the transparent dielectric defect structure using the emission of multiply charged ions

    R. Abdupataev, M.R. Bendilov, Kh.B. Bejsembaeva +1

    СтатьяIntegrated Circuits and Semiconductor Failure Analysis1986Цитирований: 1
    ABI

  13. Baric Impurity Effects in Silicon

    Victor I. Fistul, A.R. Turaev, С. З. Зайнабидинов

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1993Цитирований: 1
    ABI

  14. The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation

    S.H. Valiev, T.S. Pugacheva, F.G. Jurabekova +2

    СтатьяSilicon and Solar Cell TechnologiesNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1997Цитирований: 1
    ABI

  15. Structure modifications and mechanical properties of alloys exposed to pulsed ion beams

    A.D. Pogrebnjak, A. E. Ligachev, A. V. Nesmelov +6

    СтатьяIon-surface interactions and analysisRadiation Effects1987Цитирований: 1
    ABI

  16. Performance Characteristics of Fiber Optical Lines and Diagnostic Techniques for Optical Fiber Cable

    Abdulaziz Nazarov, Bobir Ochilov, Mirkomil Khasanov

    СтатьяIntegrated Circuits and Semiconductor Failure Analysis2021 International Conference on Information Science and Communications Technologies (ICISCT)2021Цитирований: 1
    ABI

  17. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2021Цитирований: 1
    ABI

  18. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

    N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

    СтатьяSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology2023Цитирований: 1
    ABI

  19. On the theory of transient process after reversal of a p–i–n diode current from forward to reveres direction (II)

    D. A. Aronov, R. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1973Цитирований: 0
    ABI

  20. The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors

    D. A. Aronov, E. P. Kotov, Ya. P. Kotov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1975Цитирований: 0
    ABI

  21. Influence of X-irradiation on silicon Schottky diodes

    U.A. Shakirov, Marat S. Yunusov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1976Цитирований: 0
    ABI

  22. Effect of <i>B</i>-subgroup elements on residual electric resistivity of bivalent metals

    Β. N. Aleksandrov, V. V. Dukin

    СтатьяElectron and X-Ray Spectroscopy TechniquesSoviet Journal of Low Temperature Physics1976Цитирований: 0
    ABI

  23. Parameters of silicon microdiodes fabricated by selective epitaxy

    M. V. Drozdova, В. Л. Суханов, V.V. Tuchkevich +2

    СтатьяSilicon and Solar Cell TechnologiesThin Solid Films1976Цитирований: 0
    ABI

  24. Transverse electron focusing at high emitter currents

    Yu. A. Kolesnichenko

    СтатьяElectron and X-Ray Spectroscopy TechniquesSoviet Journal of Low Temperature Physics1980Цитирований: 0
    ABI

  25. Transverse focusing of electrons in the presence of plane defects terminating at the specimen surface

    S. A. Korzh

    СтатьяElectron and X-Ray Spectroscopy TechniquesSoviet Journal of Low Temperature Physics1981Цитирований: 0
    ABI