Статья

Cluster projectile ions used for the SIMS analysis of silicon

Sh.Dj. AkhunovArifov Institute of Electronics, Uzbekistan Academy of Sciences, Tashkent, 100125, UzbekistanС. Н. МорозовArifov Institute of Electronics, Uzbekistan Academy of Sciences, Tashkent, 100125, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2013en

ABI

Аннотация

Comparative studies of the emission of Si + (n = 1–11) cluster ions and impurity-containing polyatomic ions under bombardment of B-doped single crystal silicon with A − (m = 1–5) cluster ions with an energy of E 0 = 6–18 keV are carried out. The peculiarities of sputtering an adsorbed-particle layer with cluster ions are revealed. The possibility of determining the depth distribution of adsorbed particles by analyzing the yield of sputtered heteroatomic molecular ions upon bombardment is demonstrated.

Темы

Ion-surface interactions and analysis Diamond and Carbon-based Materials Research Integrated Circuits and Semiconductor Failure Analysis

Идентификаторы

DOI: 10.1134/s1027451013030208

Цитирования и источники

Цитирований: 1 Использованных источников: 14

Показатели — AkademScholar · Скоро