E.Kh. Berkinov

Работ: 1

Research Associate Scientific Research Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan, Tashkent, Uzbekistan

1. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

   N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

   СтатьяSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.585531