R.M. Turmanova

Работ: 4

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.279528

2. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

   N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

   СтатьяSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.585531

3. Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

   S.Z. Zainabidinov, Sh. Akbarov, N. A. Turgunov +2

   СтатьяSilicon and Solar Cell TechnologiesE3S Web of Conferences2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.005652

4. Effect of Impurity Clusters on Optical Properties of Nickel and Copper Doped Single-Crystal Silicon

   S. Z. Zainabidinov, N.A. Turgunov, Akramjon Y. Boboev +6

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.011338