Elmurod Kh. Berkinov

Работ: 2

Research Institute of Physics of Semiconductors and Microelectronics at the National University of Uzbekistan, 20, Yangi Almazar St., 100057 Tashkent, Republic of Uzbekistan

1. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

   N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

   СтатьяSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics2021Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.279523

2. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.279528