Effect of Impurity Clusters on Optical Properties of Nickel and Copper Doped Single-Crystal Silicon
S. Z. ZainabidinovAndijan State University named after Z.M. Babur, Andijan, UzbekistanN.A. TurgunovResearch Institute of Semiconductor and Microelectronics Physics at the National University of Uzbekistan, TashkentAkramjon Y. BoboevAndijan State University named after Z.M. Babur, Andijan, UzbekistanShuhratjon K. AkbarovAndijan State University named after Z.M. Babur, Andijan, UzbekistanR.M. TurmanovaResearch Institute of Semiconductor and Microelectronics Physics at the National University of Uzbekistan, TashkentAbdukakhor ArikovAndijan state university named after Z.M. Babur, Andijan, UzbekistanMuqaddas O. KuchkarovaAndijan state university named after Z.M. Babur, Andijan, UzbekistanBakhrikhon TolanovaAndijan state university named after Z.M. Babur, Andijan, UzbekistanMarkhabo B. RasulovaAndijan state university named after Z.M. Babur, Andijan, Uzbekistan
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Аннотация
This paper deals with the influence of impurity atoms on the optical properties of single-crystal silicon doped with nickel and copper during high-temperature diffusion doping. And also, the processes of formation of various chemical compounds involving oxygen, carbon, and atoms of nickel, copper, and silicon. By means of FTIR spectrometry and X-ray diffraction analysis, it was revealed that the concentrations of optically active oxygen and carbon in the volume of silicon samples doped with nickel and copper significantly increase compared to the original samples.
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