Zafar B. Khudoynazarov

Работ: 3

Tashkent State Technical University named after Islam Karimov, 100095, Tashkent, Uzbekistan

1. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.002753

2. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.003062

3. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

   B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009031