Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы

Integrated Circuits and Semiconductor Failure Analysis

Работ: 142

  1. Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement

    A. V. Karimov, D. P. Dzhuraev, Sh. M. Kuliev +1

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2016Цитирований: 3
    ABI

  2. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 3
    ABI

  3. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 3
    ABI

  4. Calibration of machine platform nonlinearity in Instrumented Indentation Test in the macro range

    Jasurkhuja Kholkhujaev, Giacomo Maculotti, Gianfranco Genta +1

    СтатьяMetal and Thin Film MechanicsPrecision Engineering2023Цитирований: 3
    ABI

  5. Computer simulation of SiC and B4C sputtering by Ar+ and He+ ions bombardment

    T.S. Pugacheva, F.G. Jurabekova, Y. Miyagawa +1

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1997Цитирований: 3
    ABI

  6. Features of the temperature properties of a field-effect transistor in a current-limiting mode

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2013Цитирований: 3
    ABI

  7. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    СтатьяSemiconductor materials and devicesResults in Physics2018Цитирований: 3
    ABI

  8. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    СтатьяSemiconductor materials and devicesTechnical Physics2019Цитирований: 3
    ABI

  9. Secondary ion emission under the bombardment of Si by multiply charged Si q+ ions

    С. Н. Морозов

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2012Цитирований: 2
    ABI

  10. Indium sputtering upon bombardment with cluster ions

    С. Н. Морозов, У. Х. Расулев

    СтатьяIon-surface interactions and analysisBulletin of the Russian Academy of Sciences Physics2012Цитирований: 2
    ABI

  11. On the unimolecular decay and mechanism of formation of Si+ n cluster ions

    Н. Х. Джемилев, С. Ф. Коваленко, С. Е. Максимов +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 2
    ABI

  12. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2019Цитирований: 2
    ABI

  13. Regularities of the Formation of SiO2 Nanophases and Nanofilms on a Si Surface during $${\text{O}}_{2}^{ + }$$-Ion Implantation

    G. Kh. Allayarova

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 2
    ABI

  14. Investigation of the Influence of Technological Factors on High-Voltage p0–n0 Junctions Based on GaAs

    A. M. Sultanov, E. K. Yusupov, R. G. Rakhimov

    СтатьяPulsed Power Technology ApplicationsJournal of Nano- and Electronic Physics2024Цитирований: 2
    ABI

  15. Design, synthesis and pharmacological evaluation of new PARP1 inhibitors by merging pharmacophores of olaparib and the natural product alantolactone

    Muzaffar Kayumov, Jia Li, Azizbek Pardaev +9

    СтатьяPARP inhibition in cancer therapyEuropean Journal of Medicinal Chemistry2022Цитирований: 2
    ABI

  16. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

    Б. Э. Эгамбердиев, M. Yu. Adylov

    СтатьяIon-surface interactions and analysisTechnical Physics Letters2001Цитирований: 2
    ABI

  17. Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110)

    A. M. Rasulov, A.A. Dzhurakhalov

    СтатьяIon-surface interactions and analysisComputational Materials Science2005Цитирований: 2
    ABI

  18. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

    Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

    СтатьяIon-surface interactions and analysisEurasian journal of physics and functional materials2023Цитирований: 2
    ABI

  19. Model and Methods for Detecting Undetected Errors Using a Signature Analyzer

    Jo’shqin Baltayev, Sunnatillo Boltayev

    ГлаваVLSI and Analog Circuit TestingLecture notes in networks and systems2022Цитирований: 2
    ABI

  20. Ion-photon emission from metals implanted with ions of reactive elements

    S.F. Belykh, R.N. Evtukhov, I.V. Redina +1

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1995Цитирований: 2
    ABI

  21. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2022Цитирований: 2
    ABI

  22. Subthreshold irradiation effects in silicon epitaxial films

    M. A. Zaikovskaya, Arnold Kiv, O. R. Niyazova

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1970Цитирований: 2
    ABI

  23. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2
    ABI

  24. On the theory of transient process after reversal of a p–i–n diode current from forward to reverse direction (I)

    D. A. Aronov, R. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1972Цитирований: 1
    ABI

  25. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

    T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

    СтатьяIon-surface interactions and analysisRadiation Effects1987Цитирований: 1
    ABI