Secondary ion emission under the bombardment of Si by multiply charged Si q+ ions

Аннотация

The spectra of secondary ion emission under the bombardment of a B-doped Si target by multiply charged Si q+ ions (q = 1–5) have been studied in the energy range of 1 to 10 keV per unit of charge. A multifold increase in the yield of secondary cluster Sk + ions, multiply charged Si q/+ ion (q = 1–3), and H+, C+, B+, Si2N+, Si2O+ is observed as the charge of the multiply charged ions increases. The increase in the yield of secondary ions with increasing charge of the multiply charged-ion charge is most significant for ions with relatively high ionization potentials.

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Идентификаторы

DOI

10.1134/s1027451012080149

Цитирования и источники