Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110)
A. M. RasulovFerghana Polytechnic Institute, Ferghana Str. 86, 712022 Ferghana, UzbekistanA.A. DzhurakhalovArifov Institute of Electronics, F. Khodjaev Str. 33, 700125 Tashkent, Uzbekistan
ABI
Аннотация
Аннотация отсутствует.