Работы, на которые ссылается эта работа

Работ: 12

Работа: Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110)

Atomic collisions on solid surfaces
Peter Sigmund
Статья1994Цитирований: 35
ABI
Atomic collisions on solid surfaces
E.S. Parilis
Книга1993Цитирований: 22
ABI
THE STOPPING AND RANGE OF IONS IN SOLIDS
J. F. Ziegler
Глава1988Цитирований: 15
ABI
Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation
Mark T. Robinson, Ian M. Torrens
Статья1974Цитирований: 15
ABI
THE STOPPING AND RANGE OF IONS IN SOLIDS
J. F. Ziegler
Глава1984Цитирований: 11
ABI
Computer Simulation of Ion-Solid Interactions
W. Eckstein
Книга1991Цитирований: 8
ABI
Ranges and profiles of distribution of low-energy ions channeling in metal and semiconductor single crystals
F. F. Umarov, A. M. Rasulov, A. Kh. Khaidarov
СтатьяIon-surface interactions and analysisRadiation effects and defects in solids2003Цитирований: 3
ABI
Anomalous inelastic energy losses and trajectory effects at small angle ion scattering by single crystal surface
A.A. Dzhurakhalov, F. F. Umarov
Статья1998Цитирований: 3
ABI
Channeling: theory, observation and applications
D. V. Morgan
Книга1973Цитирований: 2
ABI
Determination of adatom sort and adsorption sites on single crystal surfaces by ions channeling through thin films
F. F. Umarov, A. M. Rasulov
СтатьяCrystallography and Radiation PhenomenaApplied Surface Science1998Цитирований: 2
ABI
Ion Implantation: Equipment and Techniques
H. Ryssel, H. Glawischnig
Книга1983Цитирований: 2
ABI
Без названия
ДругоеЦитирований: 1
ABI