A. S. Lutovich

Работ: 1

Tashkent Polytechnical Institute; Institute of Electronics, Uzbek Academy of Sciences , Tashkent, USSR

1. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

   T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

   СтатьяIon-surface interactions and analysisRadiation Effects1987Цитирований: 1

   ABIABI:AkademIndex/openalex/1987.article.000061