Статья

Investigation of the Influence of Technological Factors on High-Voltage p0–n0 Junctions Based on GaAs

A. M. SultanovNamangan Institute of Engineering and Technology, 160115 Namangan, UzbekistanE. K. YusupovNamangan Institute of Engineering and Technology, 160115 Namangan, UzbekistanR. G. RakhimovNamangan Institute of Engineering and Technology, 160115 Namangan, Uzbekistan

Journal of Nano- and Electronic Physicsjournal2024en

ABI

Аннотация

Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)

Темы

Pulsed Power Technology Applications Integrated Circuits and Semiconductor Failure Analysis Ion-surface interactions and analysis

Идентификаторы

DOI: 10.21272/jnep.16(1).01010

Цитирования и источники

Цитирований: 2 Использованных источников: 16

Показатели — AkademScholar · Скоро