Работы, цитирующие эту работу

Работ: 2

Работа: Investigation of the Influence of Technological Factors on High-Voltage p0–n0 Junctions Based on GaAs

1. Temperature dependence of magneto-optic absorption coefficients in nanostructured semiconductors

   U. I. Erkaboev, R. G. Rakhimov, A. B. Mirzamahmudov +2

   СтатьяSemiconductor Quantum Structures and DevicesAIP conference proceedings2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.003140

2. Radiation dynamics of GaAs-AlGaAs superluminescent leds: Study and features

   Ahmadjon Sultonov, B. I. Uktamaliyev

   СтатьяSemiconductor Quantum Structures and DevicesAIP conference proceedings2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.007416