Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer
Zamira AtamuratovaUrgench State University, 220100, Urgench, UzbekistanА. YusupovAl Khwarizmi University of Information Technologies, 100200, Tashkent, UzbekistanB. O. KhalikberdievUrgench State University, 220100, Urgench, UzbekistanA. É. AtamuratovUrgench State University, 220100, Urgench, Uzbekistan
ABI
Аннотация
The C–V characteristic of the lateral source–substrate junction in a metal–nitride–oxide–semiconductor transistor has been simulated. With a certain voltage across the junction that depends on the dopant concentration in the substrate, a local trapped charge embedded in the nitride layer causes an anomalous rise or fall of the junction capacitance. Such a capacitance variation is associated with charge carrier redistribution in the near-surface region of the substrate when the trapped charge is embedded. This feature of the C–V characteristic can be used to detect a local charge embedded in the insulating layer of a field-effect transistor.
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