Статья

SiC plasma characterization produced by 3 ns pulse laser at 10 <sup>10</sup> W/cm <sup>2</sup> intensity

L. TorrisiUniversità di MessinaA. TorrisiUniversità Kore di EnnaM. CutroneoInstitute of Nuclear Physics of CAS

Radiation effects and defects in solidsjournal2024en

ABI

Аннотация

A silicon carbide (SiC) plasma has been produced by a Q-switched laser at 1064 nm, 3 ns pulse and 1010 W/cm2 intensity, in high vacuum to investigate the fundamental mechanisms of laser-semiconductor interaction. Although the high hardness and chemical stability restrain the SiC micromachining, it is a valuable semiconductor for devices working under extreme conditions.

Темы

Silicon Carbide Semiconductor Technologies Semiconductor materials and devices Integrated Circuits and Semiconductor Failure Analysis

Идентификаторы

DOI: 10.1080/10420150.2024.2369122

Цитирования и источники

Цитирований: 0Использованных источников: 20

Показатели — AkademScholar · Скоро