Статья

The amplitude of RTN in nanometer SOI FinFET with different channel shape

Ahmed YusupovDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies named after Muhammad al-Khwarizmi, Tashkent, 100200, UzbekistanA. É. AtamuratovDepartment of Physics, Urgench State University, Urgench, 220100, UzbekistanAzamat E. AbdikarimovDepartment of Physics, Urgench State University, Urgench, 220100, UzbekistanJean Chamberlain ChedjouDepartment of Transportation Informatics (TIG), University of Klagenfurt, Klagenfurt, 9020, AustriaKyandoghere KyamakyaDepartment of Transportation Informatics (TIG), University of Klagenfurt, Klagenfurt, 9020, Austria

Developments of Artificial Intelligence Technologies in Computation and Roboticsjournal2020en

ABI

Аннотация

Аннотация отсутствует.

Темы

Advancements in Semiconductor Devices and Circuit Design Integrated Circuits and Semiconductor Failure Analysis Semiconductor materials and devices

Идентификаторы

DOI: 10.1142/9789811223334_0184

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