Статья

Radiation defects in Ar+-ion-implanted Hg1?xCdxTe crystals

A. S. PetrovV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskВ. С. КуликаускасV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskYu. V. LilenkoV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskА. П. КоханенкоV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskА. В. ВойцеховскийV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskE. M. KiryushkinV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskK. V. ShastovV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskК. КурбановV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskA. P. MamontovV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskV. A. KorotchenkoV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, Tomsk

Russian Physics Journaljournal1988en

ABI

Аннотация

Аннотация отсутствует.

Темы

Advanced Semiconductor Detectors and Materials Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis

Идентификаторы

DOI: 10.1007/bf01101176

Цитирования и источники

Цитирований: 0Использованных источников: 9

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