Статья

High non-additive sputtering of silicon as large positive cluster ions under polyatomic ion bombardment

S.F. BelykhArifov Institute of Electronics, Akademgorodok, 700143 Tashkent, UzbekistanУ. Х. РасулевArifov Institute of Electronics, Akademgorodok, 700143 Tashkent, UzbekistanA.V. SamartsevArifov Institute of Electronics, Akademgorodok, 700143 Tashkent, UzbekistanL.V StroevArifov Institute of Electronics, Akademgorodok, 700143 Tashkent, UzbekistanА. V. ZinovievArifov Institute of Electronics, Akademgorodok, 700143 Tashkent, Uzbekistan

Vacuumjournal2000en

ABI

Аннотация

Аннотация отсутствует.

Темы

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Diamond and Carbon-based Materials Research

Идентификаторы

DOI: 10.1016/s0042-207x(99)00207-9

Цитирования и источники

Цитирований: 9 Использованных источников: 31

Показатели — AkademScholar · Скоро