High non-additive sputtering of silicon as large positive cluster ions under polyatomic ion bombardment
S.F. BelykhArifov Institute of Electronics, Akademgorodok, 700143 Tashkent, UzbekistanУ. Х. РасулевArifov Institute of Electronics, Akademgorodok, 700143 Tashkent, UzbekistanA.V. SamartsevArifov Institute of Electronics, Akademgorodok, 700143 Tashkent, UzbekistanL.V StroevArifov Institute of Electronics, Akademgorodok, 700143 Tashkent, UzbekistanА. V. ZinovievArifov Institute of Electronics, Akademgorodok, 700143 Tashkent, Uzbekistan
ABI
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