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A. É. Atamuratov

Работ: 37

Urgench State University 2 Department of Physics, , 740013 Urganch, Uzbekistan

  1. Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

    Jiandong Wei, S. F. Li, A. É. Atamuratov +2

    СтатьяForce Microscopy Techniques and ApplicationsApplied Physics Letters2010Цитирований: 0
    ABI

  2. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

    A. É. Atamuratov, R. Granzner, M. Kittler +3

    ГлаваSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics2013Цитирований: 0
    ABI

  3. The amplitude of RTN in nanometer SOI FinFET with different channel shape

    Ahmed Yusupov, A. É. Atamuratov, Azamat E. Abdikarimov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignDevelopments of Artificial Intelligence Technologies in Computation and Robotics2020Цитирований: 0
    ABI

  4. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology2021Цитирований: 0
    ABI

  5. Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials

    A. É. Atamuratov, X. Sh. Saparov, Jean Chamberlain Chedjou +2

    Статья2D Materials and Applications2022Цитирований: 0
    ABI

  6. Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence

    А. Yusupov, A. É. Atamuratov, A.E. Abdikarimov +5

    СтатьяAdvanced Memory and Neural Computing2022Цитирований: 0
    ABI

  7. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures2024Цитирований: 0
    ABI

  8. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    СтатьяSemiconductor materials and devicesJournal of Computational Electronics2025Цитирований: 0
    ABI

  9. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
    ABI

  10. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

    M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

    СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
    ABI

  11. Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

    A. É. Atamuratov, B. Q. Jumaboev, M. M. Khalilloev +3

    ПрепринтSemiconductor Quantum Structures and DevicesResearch Square2025Цитирований: 0
    ABI

  12. First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations

    M. M. Khalilloev, B. O. Jabbarova, Asrorbek Hasanov +2

    Статья2D Materials and ApplicationsEast European Journal of Physics2026Цитирований: 0
    ABI