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Semiconductor Quantum Structures and Devices

Работ: 469

  1. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 9
    ABI

  2. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9
    ABI

  3. Influence of temperature on the oscillations of longitudinal magnetoresistance in semiconductors with a nonparabolic dispersion law

    G. Gulyamov, У. И. Эркабоев, A. G. Gulyamov

    СтатьяQuantum and electron transport phenomenaIndian Journal of Physics2018Цитирований: 9
    ABI

  4. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 9
    ABI

  5. Influence of exciton decay on the polariton luminescence spectra of CdTe crystal

    Б. Ж. Ахмадалиев, Б. З. Полвонов, N. Kh. Yuldashev

    СтатьяSemiconductor Quantum Structures and DevicesOptics and Spectroscopy2014Цитирований: 9
    ABI

  6. On the Heat Capacity of a Quasi-Two-Dimensional Electron Gas

    P. J. Baymatov, A. G. Gulyamov, B. T. Abdulazizov

    СтатьяQuantum and electron transport phenomenaAdvances in Condensed Matter Physics2019Цитирований: 8
    ABI

  7. The Influence of Temperature on Magnetic Quantum Effects in Semiconductor Structures

    G. Gulyamov, U. I. Erkaboev, N. A. Sayidov +1

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Applied Science and Engineering2020Цитирований: 8
    ABI

  8. Peculiarities of the Temperature Dependence of the Chemical Potential of a Two-dimensional Electron Gas in Magnetic Field

    B. T. Abdulazizov, G. Gulyamov, P. J. Baymatov +3

    СтатьяQuantum and electron transport phenomenaSPIN2022Цитирований: 8
    ABI

  9. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    СтатьяPhotocathodes and Microchannel PlatesTechnical Physics2019Цитирований: 8
    ABI

  10. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2020Цитирований: 8
    ABI

  11. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    СтатьяQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering2019Цитирований: 8
    ABI

  12. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2011Цитирований: 8
    ABI

  13. On the Theory of the Shift Linear Photovoltaic Effect in Semiconductors of Tetrahedral Symmetry Under Two-Photon Absorption

    Rustam Yavkachovich Rasulov, I. Éshboltaev

    СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal2016Цитирований: 8
    ABI

  14. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
    ABI

  15. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    СтатьяNear-Field Optical MicroscopyPhysics of the Solid State2014Цитирований: 7
    ABI

  16. Subbarrier and Overbarrier Electron Transfer through Multilayer Semiconductor Structures

    Rustam Yavkachovich Rasulov, N. Z. Mamadalieva, R. R. Sultanov

    СтатьяSemiconductor materials and interfacesRussian Physics Journal2020Цитирований: 7
    ABI

  17. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 7
    ABI

  18. Stabilization of parameters of optoelectronic devices on semiconductor emitters

    Obbosjon Kuldashov, Odinakhon Rayimdjanova, Bahrom Djalilov +3

    СтатьяSemiconductor Quantum Structures and DevicesE3S Web of Conferences2024Цитирований: 7
    ABI

  19. Three-Band Simulation of the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mi>g</a:mi> </a:math>-Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

    G. Gulyamov, B. T. Abdulazizov, P. J. Baymatov

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Nanomaterials2021Цитирований: 7
    ABI

  20. Low Energy Ar&lt;sup&gt;+&lt;/sup&gt; Ion Scattering on InGaP(001) Surface

    Karimov Mukhtorjon Karimberganovich, Kutliev Uchkun Otoboyevich, Ismailov Shavkat Ko'ziyevich +1

    СтатьяIon-surface interactions and analysise-Journal of Surface Science and Nanotechnology2020Цитирований: 7
    ABI

  21. Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires

    G. Gulyamov, A. B. Davlatov, Kh. N. Juraev

    СтатьяOptical properties and cooling technologies in crystalline materialsLow Temperature Physics2022Цитирований: 7
    ABI

  22. Classification of impurity voltaic effects in semiconductors and impurity voltaics

    М. С. Саидов

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2008Цитирований: 6
    ABI

  23. Angular Distributions of Scattered Ne and Ar Ions at the Grazing Incidence on the InGaP (001) 110 Surface

    М. K. Kаrimov, Uchkun Kutliev, Kamola Otabaeva +1

    СтатьяRadiation Detection and Scintillator TechnologiesJournal of Nano- and Electronic Physics2020Цитирований: 6
    ABI

  24. Heat-voltaic properties of silicon film-type p-n structures generated by vacuum deposition

    Х. Б. Ашуров, B. M. Abdurakhmanov, Ш.К. Кучканов +2

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2012Цитирований: 6
    ABI

  25. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2008Цитирований: 6
    ABI