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Three-Band Simulation of the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mi>g</a:mi> </a:math>-Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

G. GulyamovNamangan State University, Namangan 160119, UzbekistanB. T. AbdulazizovPhysical-Technical Institute, Scientific Association “Physics-Sun”, Uzbekistan Academy of Sciences, Chingiz Aytmatov Street 2B, 100084 Tashkent, UzbekistanP. J. BaymatovNamangan State University, Namangan 160119, Uzbekistan
Journal of Nanomaterialsjournal2021en
ABI

Аннотация

The results of calculations of the Landau level and cyclotron <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M2"> <a:mi>g</a:mi> </a:math> -electron factor in strong magnetic fields in an InAs quantum well based on both the three-band and two-band models are presented. The calculations were performed in the approximation of infinity of the depth of the quantum well, taking into account the Landau level of the second subband. It is shown that the three-band model satisfactorily describes the experimental data.

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