Heat-voltaic properties of silicon film-type p-n structures generated by vacuum deposition
Х. Б. АшуровInstitute for Ion Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanB. M. AbdurakhmanovInstitute for Ion Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanШ.К. КучкановInstitute for Ion Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanС. Е. МаксимовInstitute for Ion Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanSamad NimatovInstitute for Ion Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, Uzbekistan
ABI
Аннотация
The heat-voltaic phenomenon that takes place in silicon film-type p-n structures generated by thermal deposition in vacuum is investigated, and the results of investigations are presented. It is shown that under uniform heating, under the absence of temperature gradient, a dark no-load voltage arises and charge carriers are generated efficiently that can be used in creating devices for converting heat energy to electric, including the photoinactive component of solar radiation.
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