A. M. Abdugafurov

Работ: 3

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan

1. Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films

   Sharifa B. Utamuradova, S. A. Muzafarova, A. M. Abdugafurov +3

   СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Physics2021Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.246860

2. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

   Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

   СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2008Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.200865

3. The photoluminescence of p-CdTe columnar films

   Kh. Kh. Ismoilov, A. M. Abdugafurov, С. Х. Шамирзаев +2

   СтатьяAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali2007Цитирований: 0

   ABIABI:AkademIndex/openalex/2007.article.000464