Maqola

Fragmentation of sputtered Si n O+ m clusters: Release kinetic and dissociation energies

Н. Х. ДжемилевArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanС. Ф. КоваленкоArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanL.F. LifanovaArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanС. Е. МаксимовArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanШ. Т. ХожиевArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan

Bulletin of the Russian Academy of Sciences Physicsjournal2008en

ABI

Annotatsiya

The spectra of kinetic energies of positive Si n O + cluster ions (n = 2–5, m = 2–7) have been measured using a double focusing ion microanalyzer with reverse geometry at instants 10−5 to 10−4 s after emission. The dissociation energies have been determined within the evaporative ensemble model and the theory of unimolecular decay reactions. The results obtained are compared with the binding energies of neutral Si n O m clusters.

Mavzular

Ion-surface interactions and analysis Semiconductor materials and devices Boron and Carbon Nanomaterials Research

Identifikatorlar

DOI: 10.3103/s1062873808070095

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