Double-injection currents in Zn-compensated silicon pin structures
Annotatsiya
Double injection currents in n–p–p+-structures from Zn compensated silicon have been studied. It is found that the current-voltage characteristic has the sublinear form: V ∝ ∝ exp (aIw). The distribution of the injected carrier concentration in p-base region adjoining to p–p+-junction exceeds their concentration at n+–p-junction. Therefore the diffusion flux direction is opposite to the drift in the major part of the p-base. In the bulk of the p-base the injected carrier concentration decreases with the current increase at approaching the sublinear region of the current-voltage characteristic. Experimental data are in good agreement with the theory of the double injection current in semiconductors with deep impurities. [Russian Text Ignored.]