Maqola

Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

Д. А. ТашмухамедоваTashkent State Technical University, Tashkent, 100095, UzbekistanM. B. YusupjanovaTashkent State Technical University, Tashkent, 100095, UzbekistanA. K. TashatovKarshi State University, Karshi, 730003, UzbekistanБ. Е. УмирзаковTashkent State Technical University, Tashkent, 100095, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2018en

ABI

Annotatsiya

The results of theoretical and experimental studies of the influence of Ba-atom implantation and the presence of an oxide film on the Si-surface sputtering coefficient under ion bombardment are presented. It is shown that, in the dose range of D = 1014–5 × 1015 cm—2, the Si sputtering coefficient increases linearly, then this increase decelerates, and is almost constant, starting from 1016 cm–2. In the range of D = 5 × 1015–5 × 1016 cm—2, the Ba sputtering coefficient increases sharply, which is explained by an increase in the Ba concentration in the surface layer during the ion bombardment process.

Mavzular

Ion-surface interactions and analysis Semiconductor materials and devices Advanced Materials Characterization Techniques

Identifikatorlar

DOI: 10.1134/s1027451018050117

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