Maqola

Three-Band Simulation of the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mi>g</a:mi> </a:math>-Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

G. GulyamovNamangan State University, Namangan 160119, UzbekistanB. T. AbdulazizovPhysical-Technical Institute, Scientific Association “Physics-Sun”, Uzbekistan Academy of Sciences, Chingiz Aytmatov Street 2B, 100084 Tashkent, UzbekistanP. J. BaymatovNamangan State University, Namangan 160119, Uzbekistan

Journal of Nanomaterialsjournal2021en

ABI

Annotatsiya

The results of calculations of the Landau level and cyclotron <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M2"> <a:mi>g</a:mi> </a:math> -electron factor in strong magnetic fields in an InAs quantum well based on both the three-band and two-band models are presented. The calculations were performed in the approximation of infinity of the depth of the quantum well, taking into account the Landau level of the second subband. It is shown that the three-band model satisfactorily describes the experimental data.

Mavzular

Semiconductor Quantum Structures and Devices Quantum and electron transport phenomena Semiconductor materials and devices

Identifikatorlar

DOI: 10.1155/2021/5542559

Iqtiboslar va manbalar

7 ta iqtibos 13 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar · Tez orada