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Ish: Three-Band Simulation of the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mi>g</a:mi> </a:math>-Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

  1. Electronic properties of two-dimensional systems

    Tsuneya Ando, A. B. Fowler, Frank Stern

    Maqola198225 iqtibos
    ABI

  2. Band parameters for III–V compound semiconductors and their alloys

    I. Vurgaftman, J. R. Meyer, L. R. Ram‐Mohan

    Maqola200121 iqtibos
    ABI

  3. Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts

    V. A. Kulbachinskiı̆, N. A. Yuzeeva, Г. Б. Галиев +4

    Maqola20124 iqtibos
    ABI

  4. Spin—Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems

    R. Winkler

    Kitob20033 iqtibos
    ABI

  5. Experimental measurements of effective mass in near-surface InAs quantum wells

    Joseph Yuan, Mehdi Hatefipour, Brenden A. Magill +11

    Maqola20203 iqtibos
    ABI

  6. Electrons and Holes in Semiconductors

    Bob20182 iqtibos
    ABI

  7. Resonant interband tunnel diodes with AlGaSb barriers

    R. Magno, Allan S. Bracker, B. R. Bennett

    Maqola20012 iqtibos
    ABI

  8. Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers

    B. R. Bennett, M. J. Yang, B. V. Shanabrook +2

    Maqola19982 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI