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7 ta ish

Ish: Three-Band Simulation of the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mi>g</a:mi> </a:math>-Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

  1. Modeling the temperature dependence of the density oscillation of energy states in two-dimensional electronic gases under the impact of a longitudinal and transversal quantum magnetic fields

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov +1

    MaqolaSemiconductor Quantum Structures and DevicesIndian Journal of Physics202215 iqtibos
    ABI

  2. Determination of the Dependence of the Oscillation of Transverse Electrical Conductivity and Magnetoresistance on Temperature in Heterostructures Based on Quantum Wells

    У. И. Эркабоев, R. G. Rakhimov

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics202311 iqtibos
    ABI

  3. Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells

    U. I. Erkaboev, R. G. Rakhimov

    MaqolaSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology202311 iqtibos
    ABI

  4. Simulation of temperature dependence of oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor materials

    Ulugbek Erkaboev, R. G. Rakhimov

    MaqolaSemiconductor Quantum Structures and Devicese-Prime - Advances in Electrical Engineering Electronics and Energy202311 iqtibos
    ABI

  5. Cyclotron mass of an electron in strong magnetic fields in a wide InAs quantum well

    B. T. Abdulazizov

    MaqolaSemiconductor Quantum Structures and DevicesEurasian journal of physics and functional materials20223 iqtibos
    ABI

  6. Electric and ionic conductivity of potassium antimony tungstate with addition of alkali metals

    Kh.N. Bozorov, O.O. Mamatkarimov, B.T. Abdulazizov

    MaqolaNuclear materials and radiation effects«Узбекский физический журнал»20220 iqtibos
    ABI

  7. Influence of heating of charge carriers on the contact resistance of the Schottky barrier

    G. Gulyamov, Q. Umarov, Alisher Z. Soliyev +1

    MaqolaSemiconductor materials and interfacesAIP conference proceedings20240 iqtibos
    ABI