Alisher Z. Soliyev

2 ta ish

Namangan Engineering Construction Institute, Namangan, Uzbekistan

1. Change in the quasi-Fermi level and current - Voltage characteristics of diodes with a p-n junction under the action of light and deformation

   G. Gulyamov, Bahodir Shahobiddinov, Alisher Z. Soliyev +2

   MaqolaSemiconductor materials and interfacesAIP conference proceedings20232 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.410283

2. Influence of heating of charge carriers on the contact resistance of the Schottky barrier

   G. Gulyamov, Q. Umarov, Alisher Z. Soliyev +1

   MaqolaSemiconductor materials and interfacesAIP conference proceedings20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.003180