Change in the quasi-Fermi level and current - Voltage characteristics of diodes with a p-n junction under the action of light and deformation
G. GulyamovNamangan Engineering Construction Institute, Namangan, UzbekistanBahodir ShahobiddinovNamangan Engineering Construction Institute, Namangan, UzbekistanAlisher Z. SoliyevNamangan Engineering Construction Institute, Namangan, UzbekistanShoxruh NazarovNamangan Engineering Construction Institute, Namangan, UzbekistanBaxtiyor MislidinovNamangan Engineering Construction Institute, Namangan, Uzbekistan
ABI
Annotatsiya
The article investigates the quasi-Fermi levels of electrons and holes in a p-n-junction under the influence of light and deformation. The relationship between the current-voltage characteristic of a diode with a p-n junction and a change in the quasi-Fermi levels under the action of light and deformation is considered. It is shown that a change in the Fermi quasi-levels of electrons and holes under the action of light and deformation causes a strong shift in the current-voltage characteristic of a diode with a p-n junction along the I-V plane.
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