Effect of Manganese Atoms on the Magnetic Properties of Silicon
O. E. SattarovAlmalyk Branch, Tashkent State Technical University, 110100, Almalyk, UzbekistanA. MavlyanovTashkent State Technical University, 100095, Tashkent, UzbekistanA. AnAlmalyk Branch, Tashkent State Technical University, 110100, Almalyk, Uzbekistan
ABI
Аннотация
It has been shown that the state of manganese atoms in the silicon lattice can be controlled with a view to varying the state and pattern of the magnetoresistance of the material. The laws governing changes in the magnetoresistance of silicon with manganese atoms (single atoms and clusters) as a function of temperature, illumination, and electric field have been determined.
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