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Advancements in Semiconductor Devices and Circuit Design

147 та иш

  1. Effect of neutron irradiation on the structure of silicon p-n junctions of voltage limiters

    A. Z. Rakhmatov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignSemiconductors20140 иқтибос
    ABI

  2. Design and simulations of the 10-bit SAR ADC in novel sub-micron technology 200 nm SOI CMOS

    Roma Dasgupta, S. Bugiel, Sebastian Głąb +3

    МақолаAnalog and Mixed-Signal Circuit Design20140 иқтибос
    ABI

  3. Drag of ballistic electrons by an ion beam

    V. L. Gurevich, M. I. Muradov

    МақолаQuantum and electron transport phenomenaJournal of Experimental and Theoretical Physics20150 иқтибос
    ABI

  4. The Nonideality Coefficient of Current-Voltage Characteristics for Asymmetric p-n-Junctions in a Microwave Field

    G. Gulyamov, Dadamirzaev Muhammadjon Gulomkodirovich, Hasan Yusupovich Mavlyanov

    МақолаSilicon and Solar Cell TechnologiesJournal of Applied Mathematics and Physics20150 иқтибос
    ABI

  5. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4

    A.E. Atamuratov, U.A. Aminov, Z.A. Atamuratova +3

    МақолаSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20150 иқтибос
    ABI

  6. Computer Engineers' Challenges for the Next Decade: The Triangle of Power Density, Circuit Degradation, and Reliability

    Jörg Henkel, Paolo Montuschi

    МақолаAdvancements in Semiconductor Devices and Circuit DesignComputer20170 иқтибос
    ABI

  7. Linear Photovoltaic Effect in a Semiconductor with a Camel’s Back Band Structure with Allowance for a Coherent Saturation Effect

    Rustam Yavkachovich Rasulov, I. Éshboltaev

    МақолаSemiconductor Quantum Structures and DevicesRussian Physics Journal20170 иқтибос
    ABI

  8. NOISES OF ELECTRONIC DEVICES (GENERAL INFORMATION, SOURCES)

    Gulkhayo Oybekovna Akbarova

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEPRA International Journal of Research & Development (IJRD)20200 иқтибос
    ABI

  9. The amplitude of RTN in nanometer SOI FinFET with different channel shape

    Ahmed Yusupov, A. É. Atamuratov, Azamat E. Abdikarimov +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignDevelopments of Artificial Intelligence Technologies in Computation and Robotics20200 иқтибос
    ABI

  10. Control of stock current in field-effect transistors by gate voltage

    Suvonova Sohiba Ahmedjonovna, Turaev Akmal Ataevich

    МақолаAdvancements in Semiconductor Devices and Circuit DesignACADEMICIA An International Multidisciplinary Research Journal20210 иқтибос
    ABI

  11. QCA based Content Addressable Memory Design

    Karimov Madjit Malikovich, Komil Tashev, Nuriddin Safoev

    МақолаQuantum-Dot Cellular Automata2021 International Conference on Information Science and Communications Technologies (ICISCT)20210 иқтибос
    ABI

  12. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    МақолаAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 иқтибос
    ABI

  13. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +2

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20220 иқтибос
    ABI

  14. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

    Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

    МақолаSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 иқтибос
    ABI

  15. INVESTIGATION OF SILICON SOLAR CELLS USING THE EDIBON SCADA SYSTEM

    M. Nosirov, Jahongir Norboyevich Ziyoitdinov, Abduhalil Eraliev +2

    МақолаSemiconductor materials and devicesЭкономика и социум20220 иқтибос
    ABI

  16. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    МақолаSemiconductor materials and devices20220 иқтибос
    ABI

  17. Significance of Cardiac Troponins as an Identification Tool in COVID-19 Patients Using Biosensors: An Update

    Yousef Rasmi, Osama F. Mosa, Shahriar Alipour +4

    Шарҳ мақолаCOVID-19 Clinical Research StudiesFrontiers in Molecular Biosciences20220 иқтибос
    ABI

  18. Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos<sub>2</sub> Based Mosfet

    Atabek E. Egamberdievich Atamuratov, Khushnudbek Sharifbaevich Saparov, Ahmed Yusupovich Yusupov +1

    ПрепринтAdvancements in Semiconductor Devices and Circuit DesignPreprints.org20230 иқтибос
    ABI

  19. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    МақолаAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 иқтибос
    ABI

  20. A Novel Four-Level T-Type Reconfigurable Fault-Tolerant Converter for Hybrid-Excitation SRM Performance Enhancement

    Guoping Wang, Hao Chen, Fengyuan Yu +8

    МақолаSemiconductor materials and devicesIEEE Transactions on Transportation Electrification20240 иқтибос
    ABI

  21. Influence of heating of charge carriers on the contact resistance of the Schottky barrier

    G. Gulyamov, Q. Umarov, Alisher Z. Soliyev +1

    МақолаSemiconductor materials and interfacesAIP conference proceedings20240 иқтибос
    ABI

  22. INVESTIGATION OF THE WIDTH OF THE FORBIDDEN ZONEHEAVILY DOPED SEMICONDUCTORS

    I. G. Tursunov, M. A. Rakhmanov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignThe American Journal of Interdisciplinary Innovations and Research20240 иқтибос
    ABI

  23. COMPARATIVE ANALYSIS OF NOT LOGIC ELEMENTS IMPLEMENTED ON MOSFET TRANSISTORS WITH THEIR ANALOGS IMPLEMENTED ON BIPOLAR TRANSISTORS

    Nodira Batirdjanovna Аlimova, Nilufar Baxtiyorovna Gulyamova

    МақолаAdvancements in Semiconductor Devices and Circuit DesignHimičeskaâ tehnologiâ. Kontrolʹ i upravlenie/Chemical Technology. Control and Management20240 иқтибос
    ABI

  24. Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

    Э. У. Арзикулов, M. Radzhabova, S. N. +4

    ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square20240 иқтибос
    ABI

  25. Lattice mismatch, pressure and temperature effects on linear and nonlinear optical properties of InAs nanodots embedded in InAsP nanowires

    A. B. Davlatov, Kawtar Feddi, Bakhrom Abdulazizov +2

    МақолаSemiconductor Quantum Structures and DevicesJournal of Luminescence20250 иқтибос
    ABI